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PDF Availablehttps://doi.org/10.1049/el.2010.3029
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Cite Journal: Electronics Letters |  Publication Date: Feb 3, 2011 |
 Citations: 9 |
Affiliation: University of Southampton
A novel graphene transistor architecture is reported. The transistor has a U-shaped geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded 105.
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