Type-II p-GaAsSb/n-InAs multi-nanowire backward diodes for rectification of low-power RF signals under a zero-bias condition

Abstract

Zero-bias nanowire backward diodes (NW BWD) were fabricated, and RF-DC conversion properties were investigated at 2.4 GHz. Type-II p-GaAs0.6Sb0.4/n-InAs NW BWDs were grown on a GaAs(111)B substrate by adopting the vapor–liquid–solid growth method. The I–V relationship displayed a large nonlinear characteristic typical to BWDs. Multi-NW BWDs indicated appropriate detected voltages when a microwave input signal of 2.4 GHz and less than 1 μW was applied across them. Impedance-matched voltage sensitivities of 3.4 and 2.9 kV W−1 were obtained for 96- and 730-NW-array diodes; these values were comparable to those of well-designed Schottky diodes.