Type–I InSb–based mid–infrared diode lasers

Abstract

Restricted accessMoreSectionsView PDF ToolsAdd to favoritesDownload CitationsTrack Citations ShareShare onFacebookTwitterLinked InRedditEmail Cite this article Ashley Tim 2001Type–I InSb–based mid–infrared diode lasersPhil. Trans. R. Soc. A.359475–488http://doi.org/10.1098/rsta.2000.0737SectionRestricted accessType–I InSb–based mid–infrared diode lasers Tim Ashley Tim Ashley Defence Evaluation and Research Agency, Malvern, Worcestershire WR14 3PS, UK Google Scholar Find this author on PubMed Search for more papers by this author Tim Ashley Tim Ashley Defence Evaluation and Research Agency, Malvern, Worcestershire WR14 3PS, UK Google Scholar Find this author on PubMed Search for more papers by this author Published:15 March 2001https://doi.org/10.1098/rsta.2000.0737AbstractSignificant developments in mid–infrared lasers have been made in recent years towards the goal of minimally cooled operation with useful output powers through the use of type–I structures made from III–V semiconductors. In particular, the use of strain in such devices to suppress non–radiative losses such as Auger recombination and intervalence–band absorption has shown promise. The indium–aluminiumgallium–antimonide (In1–x–yAlxGaySb) materials system offers an excellent compromise between the requirements for good electronic and optical confinement and those for low series resistance necessary for efficient diode laser operation across the 3–5 μm wavelength range. We present data from diode lasers, grown by molecular beam epitaxy, comprising compressively strained InSb–like wells within In1–x–yAlxGaySb confining regions and In1–xAlxSb cladding layers. At 77 K, the threshold current density is less than 50 A cm−2 and differential efficiency as high as 30% per facet for devices with an emission wavelength of 3.4 μm. The maximum temperature of operation demonstrated to date is 170 K; however, theory indicates that, with optimization of well and barrier parameters, minimally cooled operation should be attainable. Previous ArticleNext Article VIEW FULL TEXT DOWNLOAD PDF FiguresRelatedReferencesDetailsCited by Solgi S, Mirzakuchaki S and Ghamsari M (2021) Design of InSb-based quantum-well laser with emission line at 5.6 μm, The European Physical Journal Plus, 10.1140/epjp/s13360-021-01381-4, 136:4, Online publication date: 1-Apr-2021. Iyer P, Pendharkar M and Schuller J (2016) Electrically Reconfigurable Metasurfaces Using Heterojunction Resonators, Advanced Optical Materials, 10.1002/adom.201600297, 4:10, (1582-1588), Online publication date: 1-Oct-2016. Haris M, Hayakawa Y, Chou F, Veeramani P and Moorthy Babu S (2013) Structural, compositional and optical analysis of InAsxSb1−x crystals grown by vertical directional solidification method, Journal of Alloys and Compounds, 10.1016/j.jallcom.2012.08.115, 548, (23-26), Online publication date: 1-Jan-2013. Nash G (2011) Mid-Infrared GaInSb/AlGaInSb Quantum Well Laser Diodes Grown on GaAs Terahertz and Mid Infrared Radiation, 10.1007/978-94-007-0769-6_16, (113-122), . Pugh J, Ho Y, Heard P, Nash G, Ashley T, Rarity J and Cryan M (2009) Design and fabrication of a midinfrared photonic crystal defect cavity in indium antimonide, Journal of Optics A: Pure and Applied Optics, 10.1088/1464-4258/11/5/054006, 11:5, (054006), Online publication date: 1-May-2009. Nash G, Smith S, Coomber S, Przeslak S, Andreev A, Carrington P, Yin M, Krier A, Buckle L, Emeny M and Ashley T (2007) Midinfrared GaInSb∕AlGaInSb quantum well laser diodes grown on GaAs, Applied Physics Letters, 10.1063/1.2793821, 91:13, (131118), Online publication date: 24-Sep-2007. Haris M, Veeramani P, Jayavel P, Hayakawa Y and Babu S (2007) Growth and Characterization of InAs x Sb 1− x Bulk Crystals and Growth Rate Measurements , Materials and Manufacturing Processes, 10.1080/10426910701191038, 22:3, (404-408), Online publication date: 19-Mar-2007. This Issue15 March 2001Volume 359Issue 1780Discussion Meeting Issue ‘Semiconductor light sources for mid-infrared applications’ organized by A. R. Adams, C. T. Elliott, A. Krier and B. N. Murdin Article InformationDOI:https://doi.org/10.1098/rsta.2000.0737Published by:Royal SocietyPrint ISSN:1364-503XOnline ISSN:1471-2962History: Published online15/03/2001Published in print15/03/2001 License: Citations and impact Keywordsindium antimonideInSbdiodemid–IRlasertype–I