Abstract
We report on the emission of mid-infrared (MIR) radiation from InGaAs/AlGaAs quantum dots upon photoexcitation and electrical injection. Mid-infrared radiation is achieved from bipolar quantum-dot lasers during near-infrared lasing. The MIR spectrum exhibits a peak at 16 μm and is dominantly TM polarized. The MIR intensity exhibits a superlinear dependence on the injection. These results are compared to optically pumped emission from InGaAs/GaAs quantum dots. The unpolarized spectrum shows peaks at 15 and 10 μm. The MIR intensity increases sublinearly with excitation power.
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