TXRF with synchrotron radiation Analysis of Ni on Si-wafer surfaces

Abstract

SR-TXRF (Synchrotron Radiation excited Total Reflection X-ray Fluorescence Analysis) with monoenergetic radiation produced by a W C multilayer monochromator has been applied to the analysis of Ni on a Si-wafer surface. An intentionally contaminated wafer with 100 pg has been used to determine the detection limits. 13 fg have been achieved for Ni at a beam current of 73 mA and extrapolated to 1000 s. This technique simulates the sample preparation technique of Vapour Phase Decomposition (VPD) on a wafer surface.