Abstract
We report on the growth of rock salt MgO films on sapphire (0001)substrates by rf plasma-assisted molecular beam epitaxy. A two-stepmethod, i.e. high temperature epilayer growth after low-temperaturebuffer layer growth, was adopted to obtain the single crystal MgO film.The epitaxial orientation between the MgO epilayer and the sapphire(0001) substrate was studied by using in situ reflection high energyelectron diffraction and ex situ x-ray diffraction, and it is foundthat the MgO film grows with [111] orientation. The role of the lowtemperature buffer layer in the improvement of crystal quality of theMgO epilayer is discussed based on the cross-sectional scanningelectron microscopy.
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