Abstract
This paper reports the results of a two-step hot filament chemical vapor deposition method to improve the quality of diamond films. Diamond films were deposited on a Si(100) substrate having an area of 45 cm 2 and a thickness of 60 μm, employing a HFCVD system. The first step is the growth of CVD diamond in the HFCVD reactor. In the second step, the samples were treated in a saturated solution of H 2SO 4:CrO 3 and rinsed in a (1:1) solution of H 2O 2:NH 4OH. After this procedure, a second diamond layer was deposited. The diamond films were analyzed by Raman scattering spectroscopy (RSS), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). The films showed a high degree of purity with a thickness of 60 μm, presenting uniform characteristics over a large area.
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