Abstract
The production of diamond films over large areas is very promising for industrial applications. The films could be fractioned, allowing for low cost use as cutting tools, optical windows, heat dissipaters, and semiconductor devices. A deposition method, which is relatively cheap and easy to operate and produces reasonable quality polycrystalline diamond films, is the hot filament chemical vapor deposition (HFCVD). However, it presents some disadvantages, such as the contamination of the diamond film with filament material, which can cause internal stresses. A two-step growth method can be employed in order to improve the quality of diamond films grown by HFCVD. In this work, diamond films were deposited on a Si(100) substrate having an area of 45 cm 2 and a thickness of 500 µm, employing an HFCVD system. Then the samples were treated in a saturated solution of H 2 SO 4 :CrO 3 and then rinsed in a (1:1) solution of H 2 O 2 :NH 4 OH. After this procedure, a second deposition was performed. The diamond films were characterized by Raman scattering spectroscopy (RSS), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). We obtained high purity films having a thickness of 60 µm and presenting uniformity over a large area.
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