Abstract

The synthesis of aluminum nitride (AlN) powders is traditionally done via the thermal nitridation process, in which the reaction temperature reaches as high as 960 °C, with more than several hours of reaction time. Moreover, the occurrence of agglomeration in melting Al particles results in poor AlN quality and a low efficiency of nitridation. In this study, an atmosphere-pressure microwave-plasma preceded the pre-synthesis process. This process operates at 550 °C for 2–10 min with the addition of NH4Cl (Al: NH4Cl = 1:1) for generating a hard AlN shell to avoid the flow and aggregation of the melting Al metals. Then, the mass production of AlN powders by the thermal nitridation process can be carried out by rapidly elevating the reaction temperature (heating rate of 15 °C/min) until 1050 °C is reached. X-Ray Diffractometer (XRD) crystal analysis shows that without the peak, Al metals can be observed by synthesizing AlN via plasma nitridation (at 550 °C for 2 min, Al: NH4Cl = 1:1), followed by thermal nitridation (at 950 °C for 1 h). Moreover, SEM images show that well-dispersed AlN powders without agglomeration were produced. Additionally, the particle size of the produced AlN powder (usually < 1 μm) tends to be reduced from 2–5 μm (Al powders), resulting in a more efficient synthesizing process (lower reaction temperature, shorter reaction time) for mass production.

Highlights

  • Aluminum nitride (AlN) is a superior ceramic material for packaging and microelectrical substrates due to its high wear resistance, high thermal conductivity (200–320 Wm−1 K−1 ), low thermal expansion coefficient (2.6–5.5 × 10−6 K−1 ), high volume resistivity (1011 Ωm), low permittivity, non-toxicity, and wide band gap (6.2 eV) [1,2]

  • addition of NH4Cl (Al), Figure 2a shows the X-Ray Diffractometer (XRD) patterns of AlN powders using a thermal nitridation technique synthesized without adding NH4 Cl (0%) at a heating rate of 15 ◦ C/min from room temperature to 850 ◦ C and held for 1 h

  • The characteristic peak intensity ratio, AlN (2θ = 33.2)/Al (2θ = 44.8), was only 2.7 due to a large amount of Al powders not being converted into AlN, which stemmed from the agglomeration of molten Al powders when the temperature was Materials 2018, 11, x FOR PEER REVIEW

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Summary

Introduction

Aluminum nitride (AlN) is a superior ceramic material for packaging and microelectrical substrates due to its high wear resistance, high thermal conductivity (200–320 Wm−1 K−1 ), low thermal expansion coefficient (2.6–5.5 × 10−6 K−1 ), high volume resistivity (1011 Ωm), low permittivity, non-toxicity, and wide band gap (6.2 eV) [1,2]. The application of plasma techniques for the synthesis of AlN powders has been introduced by various researchers; such as direct-current (DC) arc plasma [1,9,10,11], transferred arc plasma [12,13], radio-frequency plasma [14,15,16], DC pulsed wire discharge [17,18], and microwave plasma [19]. All of these synthesis techniques require high reaction temperatures (1000–1100 ◦ C)

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