Abstract

In this study, epilayers of packaged indium gallium nitride light emitting diodes (LED's) are characterized by optical beam induced current (OBIC) and photoluminescence laser scanning microscopy through two-photon excitation. OBIC reveals spatial and electrical characteristics of LED's which can not be distinguished by photoluminescence. When compared with single- photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers that are being focused on. The uniformity of these LED's OBIC images can also be related to their light emitting efficiency.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.