Abstract
In this study, InGaN light emitting diodes (LEDs) are characterized by optical beam induced current (OBIC) and photoluminescence laser scanning microscopy through two-photon excitation. Light scattering and absorption in the packaging material and the p-doped top layer of the LEDs are greatly reduced as a result of employing longer excitation wavelength with energy less than the band gap of the top p-layer. When compared with single photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers focused on.
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