Two-parameter multi-state memory device based on memristance and memcapacitance characteristics

Abstract

A device with an Al/copolymer/indium tin oxide structure is fabricated using a copolymer with a donor and acceptor structure. The memcapacitance characteristic corresponding to the single resistance state is found, and two-parameter storage is achieved. The device exhibits six capacitance states in three resistance states and excellent memory switching characteristics, including a low ON/OFF voltage, long retention time, and write-once–read-many-times and write–read–erase–read ability. The writing and reading of the capacitance and resistance states can be achieved by designing the appropriate voltage signal. These results provide a new approach for improving the storage density and information encryption.