Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555–620 nm spectral region using a thick GaP window layer

Abstract

AlGaInP light-emitting diodes (LEDs) with external quantum efficiencies ≥6% and luminous performance of 20 lm/W have been fabricated. These LEDs are twice as efficient as previously reported AlGaInP devices throughout the spectral region from green (555 nm) to red-orange (620 nm) owing to a thicker GaP window layer (45 vs 15 μm). Using hydride vapor phase epitaxy, thick GaP window layers were grown on top of AlGaInP double heterostructures grown by organometallic vapor phase epitaxy. The efficiency of the LEDs was found to improve as the thickness of the window layer was increased from 9 to 63 μm. This improvement is predicted by a simple model that considers the benefit of enhanced emission through the sides of the thick window. The effect of emission wavelength on quantum efficiency and luminous performance for AlGaInP LEDs with a 45 μm thick window has been studied.