Abstract
The impact of transient-enhanced diffusion (TED) and oxidation-enhanced diffusion (OED) on the device performance of advanced Si devices has long been recognized. The short-channel behaviour of MOSFET's is for instance known to be affected. Experimental studies of TED have almost exclusively been restricted to one-dimensional cases, but a full two-dimensional analysis of TED is mandatory to evaluate its impact on device performance. In this paper we present a detailed experimental study of 2D TED for low-dose and high-dose implantations. Furthermore, for the first time the impact of 2D TED due to the external base implantations on the electrical behaviour of single-poly bipolar transistors in a BiCMOS process has been analyzed. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
