Abstract
Ion implants of 11B+, 49BF2+, 31P+ and 75As+ at energies as low as 0.25 keV at various doses were implanted and rapid thermal annealed (RTA) with controlled O2 levels in N2 ambient to investigate the effects of oxygen during anneal. For each of these implant species, an optimal RTA ambient of O2 in N2 is established which maximizes retained dose and uniformity while minimizing oxidation enhanced diffusion (OED) and other oxygen related diffusion effects. TEM analysis was performed for all species and energy thresholds identified (at 1e15/cm2), below which no extended-defects or loops were observed to form and hence a regime where transient enhanced diffusion (TED) should not affect dopant diffusion. In this energy regime with anneals in a low ppm O2 in N2 ambient, the contributions from TED, OED, BED (boridation enhanced diffusion or other dopant enhanced diffusion effects) are minimized/eliminated. With these enhanced diffusion mechanisms under control, the effects of minimizing the thermal diffusion by ...
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