Abstract
AbstractHall mobility, Hall ratio, and magnetoresistance coefficient of the electrons two‐dimensionally itinerant in a square quantum well of GaAs are calculated in the regime of dominant lattice scattering. A numerical iterative solution of the Boltzmann equation is used considering Fermi‐Dirac statistics. The variation of the galvanomagnetic coefficients is studied with temperature, 2D carrier concentration, channel width, and magnetic field in the classical region.
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