Abstract
Hall mobility, Hall-to-drift mobility ratio, and the magnetoresistance coefficient of the two-dimensional (2D) electron gas in a square quantum well of GaAs are calculated in the temperature range 4--40 K in the framework of Fermi-Dirac statistics. Carrier scattering via screened deformation potential acoustic, piezoelectric, and ionized impurity interactions are considered. The variation of the galvanomagnetic coefficients is studied with lattice temperature, 2D carrier concentration, channel width, and the magnetic field in the classical region. Our calculated mobilities agree well with the available experimental data. The magnetoresistance coefficient is found to be quite sensitive to the change of the system parameters.
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