Abstract
Here, we report the formation of two-dimensional electron gas (2DEG) in MgZnO/ZnO heterostructures grown by dual-ion beam sputtering system. Room-temperature 2DEG density and hall mobility are measured with varying Mg concentration in the barrier layer (5, 15, 20, and 30 at.%). 2DEG density and hall mobility are observed to rise from 3.86×1013 to 9.12×1013 cm−2 and 16.45 to 28.13 cm2/V-s, respectively, with corresponding increase in Mg concentration in barrier layer from 5 to 30 at.%.
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