Abstract
This paper examined the potential of devices based heterostructures made from ferroelectric and GaN semiconductor. Results showed that carrier density induced from ferroelectric in BTO/GaN is several times higher than that of from AlGaN. In BTO/AlGaN/GaN structure, a positive polarization of 50μC/cm2 makes quantum well deeper, thus improve the 2DEG density 30%. For the AlGaN(0001)/GaN(0001)/BaTiO3(111) double heterostructure, there will be two channels in GaN layer and the sheet electron density will be doubled compared to conventional AlGaN/GaN heterojunction. Our theory predictions provide some references to the design of new electronic devices.
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