Abstract
A novel two-dimensional drift–diffusion model of carrier dynamics in femtosecond-irradiated n-GaAs and InAs surfaces under a magnetic field is presented. The analysis provides a comprehensive picture of THz emission enhancement mechanisms from semiconductor surfaces. The far-field THz emission is evaluated at various optical excitation levels, magnetic field strengths, and magnetic field orientations. The model accurately describes the power dependence of THz emission from n-GaAs and InAs surfaces for magnetic field values up to ±10 and ±6 T, respectively. Observed saturation effects in both semiconductors for optical excitation densities from 40 nJ/cm2 to 2.2 μJ/cm2 are in excellent agreement with previously reported experimental data.
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