Abstract
We present a model of THz emission enhancement from femtosecond pulse excited n-GaAs and InAs surfaces with the application of a dc magnetic field. The far-field THz emission at different optical excitation densities, magnetic field strengths, and magnetic field orientations is determined. The model accurately describes the power dependence of THz emission from n-GaAs and InAs surfaces for magnetic field strengths up to ±10 T and ±6 T, respectively. THz emission saturation in both semiconductors for optical excitation densities from 40 nJ/cm 2 to 2.2 μJ/cm 2 are in accordance with previously reported experimental data. The model provides a useful tool for the description of ultra-fast processes in semiconductors.
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