Two‐dimensional Boron Nitride for Electronics and Energy Applications

Abstract

Two‐dimensional (2D) boron nitride (BN), the so‐called “white graphene,” has demonstrated a great potential in various fields, particularly in electronics and energy, by utilizing its wide bandgap (~5.5 eV), superior thermal stability, high thermal conductance, chemical inertness, and outstanding dielectric properties. However, to further optimize the performances from the view of structure–property relationship, the determinative factors such as crystallite sizes, layer thickness, dispersibility, and surface functionalities should be precisely controlled and adjusted. Therefore, in this review, the synthesis and functionalization methods including “top‐down” and “bottom‐up” strategies, and non‐covalent and covalent modifications for 2D BN are systematically classified and discussed at first, thus catering for the requirements of versatile applications. Then, the progresses of 2D BN applied in the fields of microelectronics such as field‐effect transistors and dielectric capacitors, energy domains such as thermal energy management and conversion, and batteries and supercapacitors are summarized to highlight the importance of 2D BN. Notably, these contents not only contain the state‐of‐the‐art 2D BN composites, but also bring the current novel design of 2D BN‐based microelectronic units. Finally, the challenges and perspectives are proposed to better broaden the scope of this material. Therefore, this review will pave an all‐around way for understanding, utilizing, and applying 2D BN in future electronics and energy applications.