Abstract
Boron nitride (BN) is a state-of-the-art ultrawide bandgap semiconducting material. One-dimensional (1D) boron nitride nanostructures have high thermal conductivity (~600 W/mK) and wide band gap (5~6eV), which make it a promising thermal interface material. As reported, the 1D BN nanostructures were usually synthesized with chemical vapor deposition, restricted by the low yield and the high cost. Herein, we present a facile hydrothermal method to get 1D BN nanostructures. In the hydrothermal process, 2D BN nanosheets were firstly exfoliated from the BN powder, and then curled into 1D BN nanostructure through the chemical etching with sodium hydroxide. The alternative approach exhibited a high yield and a high concentration, which should be meaningful for the fabrication of 1D BN nanostrucutres
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