Two-dimensional array of high-power strained quantum well lasers with λ=0.95 μm

Abstract

An incoherent, two-dimensional array of high-power lasers operating at λ=0.95 μm is demonstrated. The laser structure consists of a single 70 Å strained In0.2Ga0.8As quantum well active region with an AlGaAs graded-index separate confinement heterostructure, prepared by atmospheric pressure organometallic vapor phase epitaxy. The rack-and-stack array contains 536 oxide-stripe emitter elements in a 1.7 mm×1 cm area, producing approximately 200 Watts at a 60 A drive current. Under pulsed operation the external differential quantum efficiency is 40% while the power conversion efficiency reaches 16%. At high power, greater than 90% of the individual elements are lasing, with an overall spectral width Δλ∼5 mm.