Abstract
The dispersion behavior of traps at the Si SiO 2 interface has been investigated applying the modulation capacitance voltage method. N-type MOS samples of different material parameters and preparation conditions were used to vary the state density distribution. Two dispersion regions have been resolved in the upper half of the gap which can be described by two Gaussian broadened time constants. The evaluated capture cross sections can be classified in two groups independent of the specific properties of the samples. The cross sections were assigned to two types of silicon dangling bond defects with different back bond configurations.
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