Abstract

The magnetic tunnel junction based on magnesium oxide is a device consisting of two ferromagnetic layers separated by the insulating layer of magnesium oxide which has proved to be the foundation of contemporary magnetic read sensors in hard disk drives (HDD). This paper sheds light on the usage of Two-Tone Testing method for the complete treatment of the non-linear impact of sensors related to dynamic ones which is not possible with conventional linear as well as one-tone measurement techniques. Two-tone technique is considered novel, but is challenging in the area of magnetic materials and magnetism because of the device’s nature. However, the experimental results demonstrate the usage of “Two-Tone Testing” to characterize the non-linear properties of a magnetic sensor. Addressing non-linear properties of a magnetic sensor helps proper design of magnetic sensors before the production, thereby signifying the importance of this approach.

Highlights

  • The growing demand for data storage capacity has resulted in extensive research in this field in the past decade

  • The high-capacity hard disk drives (HDD) require extensive research in this field, which started from the introduction of giant magneto-resistive effects to magnesium oxide Magnetic Tunnel Junction (MTJ) etc

  • Using the concept of voltage dependence of MTJ, we studied the relation of input power and 2nd and 3rd harmonic at different applied biases

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Summary

Introduction

The growing demand for data storage capacity has resulted in extensive research in this field in the past decade. With the start of commercialization of applications, the idea of Magnetic Tunnel Junction (MTJ) emerged. The high-capacity HDDs require extensive research in this field, which started from the introduction of giant magneto-resistive effects to magnesium oxide MTJs etc. MTJ is a device which uses the phenomenon of tunnel magneto-resistance to hold the information for hard disk drives (HDD) and serving the purpose of memory. They are more efficient than the conventional CMOS memories, as they do not require continuous refreshing, reducing the power consumption. A basic structure of MTJ is depicted in Figure 1 which shows its composition consisting of two Ferro-magnetic

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