Abstract
For analysis of oxidation-enhanced and -retarded diffusion (OED and ORD) and oxidation stacking faults (OSF) in Si, two out of the three equations for OED, ORD and OSF were used. The equation for a local equilibrium between self-interstitials and vacancies was also used. Thus three equations were used. Two time values were taken in these three equations. In the previous paper (Jpn. J. Appl. Phys. 27 (1988) 967), the experimental results were modified in order to obtain physically reasonable solutions. But this is not good. In the present work, therefore, the equations were simultaneously solved without modifying experimental results. It was concluded that the equation of OSF should not be used.
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