Solutions of Simultaneous Equations for Oxidation Enhanced and Retarded Diffusions and Oxidation Stacking Fault in Silicon

Abstract

Equations for oxidation enhanced and retarded diffusions (OED and ORD) and oxidation stacking faults (OSF) in silicon have been solved simultaneously, using experimental results at 1100°C for 1.0×104-2.4×105 s. A simple relation between the concentrations of self-interstitials and vacancies was assumed in order to obtain the solutions. It is concluded that the product of the concentrations of the self-interstitials and vacancies, CICV, is nearly equal to the value for thermal equilibrium, CI0CV0, and that the fractional components of the interstitialcy mechanism for self-, Sb and P diffusions are smaller than 0.5, smaller than 0.5 and larger than 0.5, respectively. This shows that the growth of OSF is caused mainly by the undersaturation of a vacancy, and that the ORD of Sb and the OED of P occur. The time dependences of the supersaturation ratios of the self-interstitials and vacancies were also obtained.