Abstract
Two-terminal nonvolatile resistive switching (RS) memory devices based on n-CdSe nanoribbon (NR)/p-Si heterojunction were fabricated. These memory devices exhibited excellent memory characteristics with high current ON/OFF ratio exceeding six orders of magnitude, long retention time over 104 s, and good endurance over 6 months. The capacitance-voltage (C-V) measurement was carried out to confirm the electrons traping and detrapping processes in interface oxide layer. The high-performance of memory devices and simple processing techniques will offer new opportunities for memory applications of one-dimensional nanomaterials.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
