Two-step SiC solution growth for dislocation reduction

Abstract

We propose a two-step silicon carbide (SiC) solution growth method for dislocation reduction to produce the high-quality silicon carbide SiC crystals. The two-step growth consists of the growth on a Si face and a C face. Firstly, seed crystal with low threading dislocation density was prepared by the growth on a Si face utilizing the threading dislocation conversion. Secondly, the growth on the C face was conducted on the prepared seed crystal with low threading dislocation density to reduce the density of basal plane dislocations and keep smooth growth surface. We demonstrate that the two-step growth leads to the reduction of the density for all types of dislocations by two orders of magnitude compared to the initial density of the seed crystal.