Abstract
A novel architecture for the On Off Keying (OOK) modulator with high gain and high data rate power amplifier (PA) operating at 11.6 GHz IBM 0.18-µm RF CMOS technology is presented for a X-band passive RFID tag. Currently used low frequency switching techniques such as multiplexers were not functioning in the high frequency X-band architectures. In this novel approach OOK modulator with power amplifier, a CMOS switch was used to transmit ‘1’ and ‘0’ coming from the digital signal unlike in the existing low frequency architectures. Both the load and driver in this proposed PA were class A operation supplied by a single ended 1.83V source. The important design considerations include output power, 1 dB compression point and linearity. The fabricated results of the amplifier have a 1 dB compression point of 1.2 dBm and input power of 5.19 dBm at 9.2 GHz.
Highlights
Used low frequency switching techniques such as multiplexers were not functioning in high frequency X-band architectures
In the proposed passive RFID tag design, the P A amplifies the signal received from the LC oscillator and matches the load to a 50Ω antenna
The RF signal was generated by Agilent 8341A vector signal generator
Summary
Used low frequency switching techniques such as multiplexers were not functioning in high frequency X-band architectures. High efficient X-band Power Amplifier (PA) was designed for the novel passive RFID tag. PA was a two- stage amplifier with both driver and output stages have class A operation. The basic CMOS class A PA was shown in Fig.. The transistor (M1) was connected with large inductor (L1) which acted as an ideal current source. Capacitors were used to block DC and pass AC (Vin)
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