Abstract
We reveal two routes of optical carrier injection in pure silicon by means of high-resolution excitation spectroscopy on nanosecond cyclotron resonances. Free carriers are generated either by the band-to-band transition assisted by phonon emission, or via two-body collisions of excitons. The first route was previously masked by a strong excitonic response in steady-state optical spectra at low temperatures. Furthermore, valley polarization is achieved for the cold carriers created by the second route with optimized excess energy. These optical carrier injection routes are crucial to initialize the momentum and valley degrees of freedom of carriers in order to enable versatile applications of indirect-bandgap semiconductors.
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