Abstract
We report the experimental realization of a tunable optical delay by exploiting unique incoherent nonlinear optical processes in semiconductors. The tunable optical delay takes advantage of the strong Coulomb interactions between excitons and free carriers and uses optical injection of free carriers to broaden and bleach an exciton absorption resonance. Fractional delay exceeding 200% has been obtained for an 8 ps optical pulse propagating near the heavy-hole excitonic transition in a GaAs quantum well structure. Tunable optical delay based on optical injection of free carriers avoids strong absorption of the pump beam and is also robust against variations in the frequency of the pump beam.
Highlights
CONSRT researchers led by Professor Wang at the University of Oregon have demonstrated experimentally a scheme that uses incoherent nonlinear optical processes to realize tunable optical delays in semiconductors
Free carriers are injected by a pump beam at λ =795 nm with power indicated in the figure
A fractional delay exceeding 200% has been obtained for an 8 ps optical pulse propagating near the heavy-hole (HH) excitonic transition in a GaAs quantum well (QW) structure
Summary
Tunable Optical Delay with Carrier Induced Exciton Dephasing in Semiconductor Quantum Wells Recent dramatic experimental demonstration of slow and fast light has stimulated considerable interest in the dynamic control of the group velocity of light and in the development of tunable alloptical delays for applications such as optical buffers. All these schemes are based on the use of coherent nonlinear optical processes.
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