Abstract
Two kinds of different electroluminescence from the porous silicon grown on p-type silicon wafers were observed by applying a forward bias to porous silicon in acidic aqueous system containing strong oxidizing agents (such as 1mol·L-1HCl, 1mol·L-1 SnCl4, and 1mol·L-1 H2SO4+0.1mol·L-1 Na2S2O8). One was the red emission with low applied voltage (V+≈1.4V). Its red peak shifted to shorter wavelength as the operation time increases. It is most possibly related to the quantum size effect. The other was the white emission exhibited after the red one was quenched and when high voltage was applied on (V+>30V). It is resulted from the hot electron injection under high electric field to the thin and continuos SiO2 sub-layer formed in the porous silicon after the red emission was quenched in the electrolyte.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
