Two-Inch Aluminum Nitride (AIN) Single Crystal Growth for Commercial Applications

Abstract

Aluminum Nitride (AlN) is an Ultra-wide Bandgap (UWBG) semiconductor that attracts significant interest for its potential application for high power switches, high power density, high frequency and high operating temperature for rf. Currently, AlN substrates are being used for ultraviolet (UV) light emitters at wavelengths shorter than 300nm including UVC Light Emitting Diodes (UVC LED) as well as laser diodes. Successful commercialization of the aluminum nitride as an UWBG substrate depends on several factors such as substrate availability, size, quality, and cost. Here we report on the current status of the bulk growth of AlN single-crystals as well as their subsequent processing for making substrates.The AlN crystals are grown using a proprietary physical vapor transport (PVT) technique where a sublimation-recondensation approach is utilized. This method shows very high potential in terms of growing large (> 2-in in diameter) bulk AlN crystals. However, some challenges have yet to be resolved en route to 100 mm diameter crystals. The crystal growth is carried out in a Tungsten crucible that contains the AlN seed and the source material. The AlN source material sublimes and decomposes into Aluminum atoms and Nitrogen molecules. These species are then transported to the seed where they form AlN and incorporate into the growing crystal along the c-axis. Aluminum nitride is used as a native seed utilizing the Al-polar face. Increasing the crystal dimensions demands careful tailoring of thermal gradients to lower the thermally induced stresses and achieve high crystalline quality. Currently, AlN single crystals with diameters > 2 inch are grown using the method described above and larger diameters are possible with appropriate furnace design. Large bulk crystals could be beneficial for production of non-polar and semi-polar substrates which are used to reduce the internal electric fields due to polarization.The AlN crystals are sliced into c-face oriented wafers and subsequently polished. Several substrate parameters are tracked such as the wafer bow, thickness variation, surface roughness, and sub-surface damage. The two-inch AlN wafers have a radius of curvature ≥ 20 m, RMS ≤ 5 Å, and zero sub-surface damage. The crystalline quality is measured by X-ray diffractometry (XRD) rocking curves, etch pit density, and photo-elastic birefringence pattern (cross-polar imaging). Narrow rocking curves for both symmetric and asymmetric reflections with full width at half maximum (FWHM) of 6 - 10 arcsec are measured across the whole the wafer area. The AlN wafers are transparent in the UV region. The graph shows a 52-point map of the absorption coefficient values 8 – 10 cm-1 at 265nm wavelength for a 2-in AlN substrate. The very low UV absorption is linked to the material purity measured by Secondary Ion Mass Spectrometry (SIMS) and Glow Discharge Mass Spectrometry (GDMS). Excellent material purity ensures achievement of high thermal conductivity, a crucial parameter for an UWBG substrate. We measure the thermal conductivity using a Xenon flash method conforming to the ASTM E1461-01 or ASTM E1461-13 standards. Using this method directly on 2-inch AlN substrate we obtain room temperature thermal conductivity 293 W/m*K at room temperature (RT) and with very high slope of about -1.6 for the temperature range from RT to 300°C suggesting minimal phonon scattering.AlN substrates made using the above described methods are used to fabricate high performance, long lifetime UVC LEDs for air purification, water disinfection, surface cleaning, and environmental sensing. High quality pseudomorphic epitaxial layers are grown using Metal-Organic Chemical Vapor Deposition (MOCVD) process to form the device structure. Commercially available WD product (Klaran™) achieve germicidal power outputs that exceed 80 mW with drive currents up to 700 mA at a nominal wavelength of 265 nm. The devices feature long lifetimes exceeding 6000 hours at L50B10 as well as a wide radiation pattern with a viewing angle of 130°. Figure 1