Two‐Dimensional Tellurene Transistors with Low Contact Resistance and Self‐Aligned Catalytic Thinning Process

Abstract

AbstractTwo‐dimensional (2D) tellurene (Te) has shown its great potential in nanoelectronics for its high carrier mobility and air stability. However, the high‐resistance electrical contact and relatively thick Te channel hinder its ultimate scaling and device performance. Here, the transport property of Te field‐effect transistors using platinum (Pt) contact with high work function is studied, which facilitates the effective hole injection in the p‐type Te channel. The electrical contact to Te using the Y‐function method (YFM) and the transmission line method (TLM) is investigated. The Te transistors with Pt contact show a low contact resistance of 400 Ωµm, a short transfer length of 80 nm, and low specific contact resistivity of 3.2 × 10−7 Ωcm2, resulting from the low Schottky barrier height (SBH) of Pt/Te interface. The Pt electrode also can work as an efficient catalyst that allows reduction of the Te channel thickness with a controllable thinning process in water under white light illumination. This self‐aligned catalytic thinning process enables the construction of the transistors with a thin Te channel and thick Te contact with Pt metal electrodes, which provides a device configuration with both effective electrostatic control and low contact resistance.