Abstract
We theoretically investigated the propagation and amplification of space charge waves on the surface of a strained Si/SiGe heterostructure at 77K, using the negative differential conductance phenomenon. In this work, we also have done a comparison between the n-GaAs thin film and strained Si/SiGe heterostructure with respect to the propagation of space charge waves. We have obtained results in 2D of propagation and amplification of space charge waves in a strained Si/SiGe heterostructure until for frequencies f<40GHz.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
