Abstract
We have shown by simulations a possibility of amplification of space charge waves in strained Si/SiGe heterostructure at 77 K, using the negative differential conductivity phenomenon. In this work we also have done a comparison between the n-GaAs thin film and strained Si/SiGe heterostructure with respect to the propagation of space charge waves. We have obtained that the amplification for signals with frequency f\le40 GHz in strained Si/SiGe heterostructure is possible, however in an n-GaAs thin film this is possible up to f\le50 GHz at 300 K [5], but Si/SiGe is compatible with Si-based technology.
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