Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

Abstract

As the trajectory of transistor scaling defined by Moore’s law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to sustain progress. Two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and exceptional electronic properties, have emerged as a beacon of promise in this quest for the continued advancement of field-effect transistor (FET) technology. The energy-efficient complementary circuit integration necessitates strategic engineering of both n-channel and p-channel 2D FETs to achieve symmetrical high performance. This intricate process mandates the realization of demanding device characteristics, including low contact resistance, precisely controlled doping schemes, high mobility, and seamless incorporation of high- κ dielectrics. Furthermore, the uniform growth of wafer-scale 2D film is imperative to mitigate defect density, minimize device-to-device variation, and establish pristine interfaces within the integrated circuits. This review examines the latest breakthroughs with a focus on the preparation of 2D channel materials and device engineering in advanced FET structures. It also extensively summarizes critical aspects such as the scalability and compatibility of 2D FET devices with existing manufacturing technologies, elucidating the synergistic relationships crucial for realizing efficient and high-performance 2D FETs. These findings extend to potential integrated circuit applications in diverse functionalities.