Abstract
Doping can effectively regulate the electrical and optical properties of two-dimensional semiconductors. Here, we present high-quality Pb-doped SnSe2 monolayer exfoliated using a micromechanical cleavage method. X-ray photoelectron spectroscopy measurement demonstrates that Pb content of the doped sample is ∼3.6% and doping induces the downward shift of the Fermi level with respect to the pure SnSe2. Transmission electron microscopy characterization exhibits that Pb0.036Sn0.964Se2 nanosheets have a high-quality hexagonal symmetry structure and Pb element is uniformly distributed in the nanosheets. The current of the SnSe2 field effect transistors (FETs) was found to be very difficult to turn off due to the high electron density. The FETs based on the Pb0.036Sn0.964Se2 monolayer show n-type behavior with a high on/off ratio of 106 which is higher than any values of SnSe2 FETs reported at the moment. The estimated carrier concentration of Pb0.036Sn0.964Se2 is approximately six times lower than that of SnSe2. The results suggest that the method of reducing carrier concentration by doping to achieve high on/off ratio is effective, and Pb-doped SnSe2 monolayer has significant potential in future nanoelectronic and optoelectronic applications.
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