Abstract
A method for the measurement of the resistivity of semiconductor samples is described which uses the electron beam of a scanning electron microscope as probe. This technique provides high local resolution (about 10 μm), causes no damage of the semiconductor material and is fast so that the two dimensional distribution of the resistivity can be plotted on a cathode ray tube. The sample, however, must be prepared to have a large area blocking Schottky-contact. The focussed electron beam generates carriers in a space charge region below a thin metal contact. The measurement is based on the change of the I- V characteristic of the Schottky diode caused by the spreading resistance from the point of the carrier generation to the bulk. Experimental results are presented as well as a theoretical evaluation of the sensitivity of this measuring technique.
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