Abstract
Two-dimensional device simulations that confirm that the side-gating effect in GaAs MESFETs occurs on semi-insulating substrates containing hole traps are discussed. A negative voltage applied on a side gate, a separate n-type doped region, causes an increase in the thickness of the negatively charged layer at the FET channel interface in the substrate, through hole emission from hole traps. The FET channel current is modulated by the electron depletion of the n-type channel, which results from the compensation for the extension of the negatively charged layer at the n-i interface into the i-substrate containing hole traps. The magnitude of the drain current reduction is determined by the total acceptor concentration in the substrate and the donor concentration of the channel. However, the magnitude is independent of the side-gate distances.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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