Abstract
Two-dimensional simulation of the sidegating effect in GaAs MESFETs have been performed with a realistic configuration, where both the FET and the sidegate are placed on the surface of the substrate. Shielding and enhancement of the sidegating effect by using Schottky metal bars, hysteresis associated with the threshold behavior of sidegating, temperature-dependence of the sidegating effect, and the reduction of the sidegating effect by isolation implants have also been studied. The results agree with experimental findings and confirm that Schottky contacts on the semi-insulating substrate and the presence of hole traps in the substrate are essential to the sidegating effect. >
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