Abstract
Molybdenum Disulfide (MoS2) is considered as one of the most important two-dimensional (2D) transition metal dichalcogenides (TMDs), its atomic thin layer has a strong potential which is to be used as gas sensor components. In this paper a two-zone furnace is used to grow quasi two-dimensional (Q2D) thin layer of MoS2 on silicon dioxide substrate by varying zone temperature. Sulfur is placed in a boat upstream separated from the MoO3 boat, which contains substrate in face-down condition. Nitrogen (N2) is used as the carrier gas. Raman spectroscopy and X-Ray diffraction (XRD) is employed to study the crystal structure of MoS2. Furthermore, we have measured the effect of hydrogen (H) and carbon monoxide (CO) gas on the resistance of MoS2layered structure. These results improve our understanding of how the resistance of Q2D thin layer of MoS2 responds to CO gas.
Published Version
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