Two Dimensional Modeling of Au/n-GaN Schottky Device

Abstract

The current-voltage characteristics are powerfully affected by the lateral inhomogeneity. We developed two dimensional (2D) simulation model for Au/n-GaN Schottky device. In previous studies, it is assumed that zero barrier height inhomogeneity of the device generally good agreement with the Gaussian distribution. In this study, it is accepted that the zero barrier height inhomogeneity is randomly distributed. The structure of the modeling device has columnar grains and gaps between the grains. Structure is divided microcells and every microcell is thought of as a single diode. Whole microcells are connected in parallel. The surface area of the microcells was assumed to be square and circle. In this study, the effect of zero barrier height inhomogeneity and the surface areas of the microcells on the current-voltage characteristics and interface state density are investigated.