Abstract
A formulation of a global mathematical two-dimensional model for Thermal Plasma Chemical Vapor Deposition (TPCVD) is reported. Both gas-phase and surface chemical kinetics as well as ordinary and thermal diffusion are incorporated. Flow is assumed to be steady, laminar and swirlless at this stage. The results include velocity, pressure, density, temperature and chemical species distributions in the reactor, and the heat flux and the film growth characteristics at the substrate.
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