Abstract
Abstract A global three-dimensional two-phase model for thermal plasma chemical vapor deposition with liquid feedstock injection developed in our group [1,2] has been used for a simulation of diamond production from acetone, ethanol and methane in argon-hydrogen plasmas. In this study, the influence of precursor type, gas and liquid flow rates, atomizing probe location and characteristics, and catalytic reactor chamber is discussed. The main finding is that deposition utilizing liquid precursors offers a distinct new deposition mechanism—liquid droplet penetration of the substrate boundary layer followed by a rapid droplet evaporation and a local increase in the surface deposition rates. Although the overall deposition rate does not exceed that of gasphase precursors, it is believed that further optimization will lead to a deposition rate increase.
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