Abstract
A novel photoconductive device structure is proposed and demonstrated that is suitable for use in two-dimensional infrared focal plane arrays (IRFPAs). The proposed device technology is based on the fabrication of high-performance long-wavelength infrared (LWIR) or mid-wavelength infrared (MWIR) photoconductors using epitaxially grown HgCdTe. Although the design concept can be applied to a variety of epitaxially grown HgCdTe materials, optimum performance is achieved using n-type HgCdTe semiconducting material consisting of epitaxially grown heterostructure layers in which a two-dimensional mosaic of photoconductors is fabricated. The heterostructure layers provide high-performance devices at greatly reduced power dissipation levels, while the unique contact design allows for the high-density integration of detectors in a two-dimensional array geometry with high fill-factor. The proposed photoconductor array with blocking contacts has been experimentally verified in a array format with all elements in the array exhibiting background limited infrared photodetector (BLIP) performance at 80 K.
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