Two-dimensional device simulation of AlGaN/GaN heterojunction FET side-gating effect

Abstract

Side-gating effects on AlGaN/GaN heterojunction FETs (HFETs) are simulated using a two-dimensional device simulator incorporating the Shockley–Read–Hall (SRH) model for deep traps. With the trap parameters obtained from experiments, the simulation results are in agreement with the experimental results including the “half-recovery” from the side-gating effect and the current reduction in the recovery process from positive side-gate bias application. The simulation indicated that the finite thickness of semi-insulating i-GaN layers suppresses side-gating effects on AlGaN/GaN HFETs with thin i-GaN layers.