Abstract
In hole trapping and radiation damage in silicon dioxide, a characteristic interface-state peak is present. It is shown by the present work that the interface peak is due to trapping of holes at the silicon-silicon dioxide interface and the subsequent capture of injected electrons by the holes. It is postulated that dipolar complexes are formed, which give rise to electronic states at the interface. Similar dipoles may be responsible for neutral traps in the bulk of oxides after irradation.
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